Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
Menu
Archives
Home
About the Journal
Editorial Team
Editorial Policies
Author Guidelines
About the Journal
Issues
Search
Current
Retracted articles
Archives
Contact
All Journals
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
×
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
Home
>
Search
>
Author Details
Author Details
Kozlovskii, V. V.
Issue
Section
Title
File
Vol 50, No 10 (2016)
Electronic Properties of Semiconductors
Some challenging points in the identification of defects in floating-zone
n
-type silicon irradiated with 8 and 15 MeV protons
TOP
