Informaçao sobre o Autor
Degtyarov, V. E.
| Edição | Seção | Título | Arquivo |
| Volume 53, Nº 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides |