作者的详细信息
Chernysh, V. S.
| 期 | 栏目 | 标题 | 文件 |
| 卷 51, 编号 6 (2017) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Study of the distribution profile of iron ions implanted into silicon | |
| 卷 53, 编号 8 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |