Автор туралы ақпарат

Samsonova, T. P.

Шығарылым	Бөлім	Атауы	Файл
Том 50, № 7 (2016)	Electronic Properties of Semiconductors	Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC
Том 50, № 7 (2016)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films
Том 51, № 3 (2017)	Physics of Semiconductor Devices	Current–voltage characteristics of high-voltage 4H-SiC p⁺–n₀–n⁺ diodes in the avalanche breakdown mode
Том 52, № 10 (2018)	Physics of Semiconductor Devices	Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
Том 52, № 12 (2018)	Physics of Semiconductor Devices	Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p⁺–n₀–n⁺ Diodes
Том 53, № 3 (2019)	Physics of Semiconductor Devices	Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)
Том 53, № 6 (2019)	Physics of Semiconductor Devices	Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation