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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Sorokina, S. V.

Issue Section Title File
Vol 50, No 1 (2016) Physics of Semiconductor Devices Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm
Vol 50, No 1 (2016) Physics of Semiconductor Devices Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters
Vol 50, No 9 (2016) Physics of Semiconductor Devices Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
Vol 50, No 10 (2016) Physics of Semiconductor Devices GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
Vol 51, No 5 (2017) Physics of Semiconductor Devices Laser (λ = 809 nm) power converter based on GaAs
Vol 52, No 3 (2018) Physics of Semiconductor Devices Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE
Vol 52, No 13 (2018) Physics of Semiconductor Devices GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)
Vol 52, No 13 (2018) Physics of Semiconductor Devices AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation
Vol 53, No 8 (2019) Physics of Semiconductor Devices Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
 

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