| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 1 (2016) |
Physics of Semiconductor Devices |
Photodetectors based on CuInS2 |
|
| Volume 50, Nº 13 (2016) |
Microelectronic and Nanoelectronic Technology |
Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface |
|
| Volume 51, Nº 2 (2017) |
Surfaces, Interfaces, and Thin Films |
Influence of the doping type and level on the morphology of porous Si formed by galvanic etching |
|
| Volume 51, Nº 8 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions |
|
| Volume 53, Nº 15 (2019) |
Technological Processes and Routes |
Mathematical Model of the Evaporation of Amalgam Components in Discharge Radiation Sources |
|
