| Issue |
Section |
Title |
File |
| Vol 50, No 1 (2016) |
Surfaces, Interfaces, and Thin Films |
Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing |
|
| Vol 50, No 13 (2016) |
Microelectronic and Nanoelectronic Technology |
Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures |
|
| Vol 51, No 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment |
|
| Vol 52, No 2 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons |
|
| Vol 52, No 9 (2018) |
Surfaces, Interfaces, and Thin Films |
Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals |
|
| Vol 53, No 1 (2019) |
Surfaces, Interfaces, and Thin Films |
Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals |
|
