作者的详细信息
Latyshev, P. E.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 5 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |