Informaçao sobre o Autor

Ivanov, P. A.

Edição Seção Título Arquivo
Volume 50, Nº 5 (2016) Physics of Semiconductor Devices Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
Volume 50, Nº 7 (2016) Electronic Properties of Semiconductors Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC
Volume 50, Nº 7 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films
Volume 51, Nº 3 (2017) Physics of Semiconductor Devices Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode
Volume 51, Nº 9 (2017) Physics of Semiconductor Devices Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode
Volume 52, Nº 1 (2018) Physics of Semiconductor Devices On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel
Volume 52, Nº 10 (2018) Physics of Semiconductor Devices Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
Volume 52, Nº 12 (2018) Physics of Semiconductor Devices Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes
Volume 53, Nº 3 (2019) Physics of Semiconductor Devices Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)
Volume 53, Nº 6 (2019) Physics of Semiconductor Devices Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
Volume 53, Nº 10 (2019) Physics of Semiconductor Devices Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Volume 53, Nº 12 (2019) Electronic Properties of Semiconductors Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs