Author Details
Dikareva, N. V.
| Issue | Section | Title | File |
| Vol 51, No 1 (2017) | Physics of Semiconductor Devices | Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate | |
| Vol 51, No 10 (2017) | Physics of Semiconductor Devices | Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well | |
| Vol 52, No 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates | |
| Vol 53, No 12 (2019) | Physics of Semiconductor Devices | GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |