| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 5 (2016) |
Physics of Semiconductor Devices |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure |
|
| Volume 51, Nº 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |
|
| Volume 52, Nº 2 (2018) |
Physics of Semiconductor Devices |
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures |
|
| Volume 52, Nº 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
|
| Volume 52, Nº 10 (2018) |
Physics of Semiconductor Devices |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
|
| Volume 52, Nº 13 (2018) |
Physics of Semiconductor Devices |
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |
|
| Volume 53, Nº 6 (2019) |
Physics of Semiconductor Devices |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
|
