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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Lunina, M. L.

Issue Section Title File
Vol 50, No 9 (2016) Physics of Semiconductor Devices Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters
Vol 51, No 3 (2017) Fabrication, Treatment, and Testing of Materials and Structures Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters
Vol 51, No 10 (2017) Fabrication, Treatment, and Testing of Materials and Structures Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures
Vol 52, No 6 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers
Vol 52, No 8 (2018) Surfaces, Interfaces, and Thin Films Effect of the Ag Nanoparticle Concentration in TiO2–Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters
Vol 53, No 7 (2019) Surfaces, Interfaces, and Thin Films On the Properties of Isoparametric AlInGaAsP/InP Heterostructures
Vol 53, No 8 (2019) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures
 

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