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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Lapushkin, M. N.

Issue Section Title File
Vol 50, No 4 (2016) Surfaces, Interfaces, and Thin Films Induced surface states of the ultrathin Ba/3C-SiC(111) interface
Vol 50, No 10 (2016) Surfaces, Interfaces, and Thin Films The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface
Vol 53, No 14 (2019) Nanostructures Characterization Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates
 

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