Author Details
Asryan, L. V.
| Issue | Section | Title | File |
| Vol 50, No 5 (2016) | Physics of Semiconductor Devices | Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers | |
| Vol 50, No 10 (2016) | Physics of Semiconductor Devices | Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling | |
| Vol 51, No 2 (2017) | Physics of Semiconductor Devices | Specific features of waveguide recombination in laser structures with asymmetric barrier layers | |
| Vol 51, No 7 (2017) | Physics of Semiconductor Devices | Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers | |
| Vol 52, No 12 (2018) | Physics of Semiconductor Devices | Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers | |
| Vol 52, No 14 (2018) | Lasers and Optoelectronic Devices | A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers |