| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 1 (2016) |
Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures |
Formation of graphite/sic structures by the thermal decomposition of silicon carbide |
|
| Volume 50, Nº 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
|
| Volume 51, Nº 2 (2017) |
Physics of Semiconductor Devices |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
|
| Volume 53, Nº 4 (2019) |
Spectroscopy, Interaction with Radiation |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
|
| Volume 53, Nº 12 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor |
|
