Автор туралы ақпарат
Karabeshkin, K. V.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 50, № 8 (2016) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si | |
| Том 53, № 4 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film | |
| Том 53, № 11 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |