Author Details
Vigdorovich, E. N.
| Issue | Section | Title | File |
| Vol 50, No 13 (2016) | Materials for Electronic Engineering | Improving the functional characteristics of gallium nitride during vapor phase epitaxy | |
| Vol 51, No 13 (2017) | Materials for Electronic Engineering | Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics | |
| Vol 52, No 15 (2018) | Basic Research | Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells | |
| Vol 53, No 15 (2019) | Technological Processes and Routes | Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds |