| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
|
| Volume 52, Nº 7 (2018) |
Spectroscopy, Interaction with Radiation |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
|
| Volume 52, Nº 9 (2018) |
Spectroscopy, Interaction with Radiation |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
|
| Volume 52, Nº 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
|
| Volume 53, Nº 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
|
