作者的详细信息

Guseinov, D. V.

栏目 标题 文件
卷 50, 编号 2 (2016) Fabrication, Treatment, and Testing of Materials and Structures Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
卷 52, 编号 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands