| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 7 (2016) |
Physics of Semiconductor Devices |
Electrochemical lithiation of silicon with varied crystallographic orientation |
|
| Том 51, № 5 (2017) |
Physics of Semiconductor Devices |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
| Том 51, № 8 (2017) |
Spectroscopy, Interaction with Radiation |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
|
| Том 52, № 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths |
|
| Том 52, № 2 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
|
| Том 52, № 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions |
|
| Том 53, № 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
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