| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 6 (2016) |
Electronic Properties of Semiconductors |
On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation |
|
| Volume 51, Nº 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric properties of InSb〈Zn〉 in nanoporous glass |
|
| Volume 51, Nº 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics |
|
| Volume 51, Nº 9 (2017) |
Electronic Properties of Semiconductors |
Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper |
|
| Volume 53, Nº 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Setup for Measuring the Thermoelectric Properties of Ultrathin Wires |
|
| Volume 53, Nº 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Nanocomposite Bi0.45Sb1.55Te2.985 Solid Solution with SiO2 Microparticles |
|
