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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Savelyev, A. V.

Issue Section Title File
Vol 50, No 10 (2016) Physics of Semiconductor Devices On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
Vol 52, No 9 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures
Vol 52, No 14 (2018) Lasers and Optoelectronic Devices A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers
Vol 53, No 14 (2019) Lasers and Optoelectronic Devices Spontaneous Emission in the Anti-Waveguiding VCSEL
Vol 53, No 14 (2019) Lasers and Optoelectronic Devices Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures
 

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