Автор туралы ақпарат

Romanov, A. E.

Шығарылым Бөлім Атауы Файл
Том 50, № 4 (2016) Fabrication, Treatment, and Testing of Materials and Structures On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
Том 50, № 7 (2016) Fabrication, Treatment, and Testing of Materials and Structures Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates