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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Pashchenko, A. S.

Issue Section Title File
Vol 50, No 4 (2016) Fabrication, Treatment, and Testing of Materials and Structures Specific features of doping with antimony during the ion-beam crystallization of silicon
Vol 52, No 6 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers
Vol 52, No 8 (2018) Surfaces, Interfaces, and Thin Films Effect of the Ag Nanoparticle Concentration in TiO2–Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters
Vol 53, No 7 (2019) Surfaces, Interfaces, and Thin Films On the Properties of Isoparametric AlInGaAsP/InP Heterostructures
Vol 53, No 8 (2019) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures
 

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