Автор туралы ақпарат

Kyuregyan, A. S.

Шығарылым Бөлім Атауы Файл
Том 50, № 3 (2016) Electronic Properties of Semiconductors On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
Том 50, № 7 (2016) Physics of Semiconductor Devices Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors
Том 51, № 9 (2017) Physics of Semiconductor Devices High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process
Том 51, № 9 (2017) Physics of Semiconductor Devices High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency
Том 52, № 3 (2018) Physics of Semiconductor Devices Optimal Doping of Diode Current Interrupters
Том 53, № 4 (2019) Physics of Semiconductor Devices Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode
Том 53, № 4 (2019) Physics of Semiconductor Devices High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with pn Junctions. III. Self-Heating Effects
Том 53, № 7 (2019) Physics of Semiconductor Devices High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation
Том 53, № 7 (2019) Physics of Semiconductor Devices High-Voltage Diffused Step Recovery Diodes: II. Theory