| Issue |
Section |
Title |
File |
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies |
|
| Vol 52, No 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization |
|
| Vol 52, No 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices |
|
| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition |
|
