Автор туралы ақпарат
Alexeev, A. N.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 51, № 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures | |
| Том 52, № 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY | MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3 |