| Edição |
Título |
Arquivo |
| Volume 50, Nº 8 (2016) |
Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique |
(Eng)
|
|
Samila A., Lastivka G., Khandozhko V., Kovalyuk Z.
|
| Volume 50, Nº 8 (2016) |
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects |
(Eng)
|
|
Aleksandrov I., Mansurov V., Zhuravlev K.
|
| Volume 50, Nº 8 (2016) |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
(Eng)
|
|
Pankin D., Smirnov M., Davydov V., Smirnov A., Zavarin E., Lundin W.
|
| Volume 50, Nº 8 (2016) |
Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime |
(Eng)
|
|
Pokhabov D., Pogosov A., Budantsev M., Zhdanov E., Bakarov A.
|
| Volume 50, Nº 7 (2016) |
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure |
(Eng)
|
|
Vasilyev Y., Mikhailov N., Vasilyeva G., Ivánov Y., Zakhar’in A., Andrianov A., Vorobiev L., Firsov D., Grigoriev M., Antonov A., Ikonnikov A., Gavrilenko V.
|
| Volume 50, Nº 7 (2016) |
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films |
(Eng)
|
|
Ivanov P., Kudoyarov M., Kozlovski M., Potapov A., Samsonova T.
|
| Volume 50, Nº 7 (2016) |
Study of deep levels in GaAs p–i–n structures |
(Eng)
|
|
Sobolev M., Soldatenkov F., Kozlov V.
|
| Volume 50, Nº 7 (2016) |
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium |
(Eng)
|
|
Imenkov A., Grebenshchikova E., Shutaev V., Ospennikov A., Sherstnev V., Yakovlev Y.
|
| Volume 50, Nº 7 (2016) |
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing |
(Eng)
|
|
Krivyakin G., Volodin V., Kochubei S., Kamaev G., Purkrt A., Remes Z., Fajgar R., Stuchliková T., Stuchlik J.
|
| Volume 50, Nº 7 (2016) |
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields |
(Eng)
|
|
Kuznetsova Y., Jmerik V., Nechaev D., Kuznetsov A., Zamoryanskaya M.
|
| Volume 50, Nº 7 (2016) |
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth |
(Eng)
|
|
Romanov V., Dement’ev P., Moiseev K.
|
| Volume 50, Nº 6 (2016) |
On the ohmicity of Schottky contacts |
(Eng)
|
|
Sachenko A., Belyaev A., Konakova R.
|
| Volume 50, Nº 6 (2016) |
Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field |
(Eng)
|
|
Karpunin V., Margulis V.
|
| Volume 50, Nº 6 (2016) |
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium |
(Eng)
|
|
Maraeva E., Moshnikov V., Petrov A., Tairov Y.
|
| Volume 50, Nº 6 (2016) |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
(Eng)
|
|
Danilov L., Petukhov A., Mikhailova M., Zegrya G., Ivanov E., Yakovlev Y.
|
| Volume 50, Nº 6 (2016) |
Generation of transverse direct current in a superlattice under a bichromatic high-frequency electric and constant magnetic fields |
(Eng)
|
|
Zav’yalov D., Konchenkov V., Kryuchkov S.
|
| Volume 50, Nº 5 (2016) |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films |
(Eng)
|
|
Avilov V., Ageev O., Konoplev B., Smirnov V., Solodovnik M., Tsukanova O.
|
| Volume 50, Nº 5 (2016) |
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide |
(Eng)
|
|
Il’in A., Fantina N., Martyshov M., Forsh P., Chizhov A., Rumyantseva M., Gaskov A., Kashkarov P.
|
| Volume 50, Nº 5 (2016) |
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range |
(Eng)
|
|
Egorov A., Karachinsky L., Novikov I., Babichev A., Nevedomskiy V., Bugrov V.
|
| Volume 50, Nº 5 (2016) |
A new simulation model for inhomogeneous Au/n-GaN structure |
(Eng)
|
|
Kavasoglu N., Kavasoglu A., Metin B.
|
| Volume 50, Nº 4 (2016) |
Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures |
(Eng)
|
|
Musaev A.
|
| Volume 50, Nº 4 (2016) |
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime |
(Eng)
|
|
Bagraev N., Chaikina E., Danilovskii E., Gets D., Klyachkin L., L’vova T., Malyarenko A.
|
| Volume 50, Nº 4 (2016) |
Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire |
(Eng)
|
|
El Ghazi H., Jorio A.
|
| Volume 50, Nº 3 (2016) |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
(Eng)
|
|
Detochenko A., Denisov S., Drozdov M., Mashin A., Gavva V., Bulanov A., Nezhdanov A., Ezhevskii A., Stepikhova M., Chalkov V., Trushin V., Shengurov D., Shengurov V., Abrosimov N., Riemann H.
|
| Volume 50, Nº 3 (2016) |
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation |
(Eng)
|
|
Popov V.
|
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