| Issue |
Title |
File |
| Vol 50, No 3 (2016) |
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms |
(Eng)
|
|
Peleshchak R.M., Lazurchak I.I., Kuzyk O.V., Dan’kiv O.O., Zegrya G.G.
|
| Vol 50, No 2 (2016) |
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field |
(Eng)
|
|
Rasulov V.R., Rasulov R.Y.
|
| Vol 50, No 2 (2016) |
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy |
(Eng)
|
|
Dunaev A.V., Murin D.B., Pivovarenok S.A.
|
| Vol 50, No 2 (2016) |
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface |
(Eng)
|
|
Bakulin A.V., Kulkova S.E.
|
| Vol 50, No 2 (2016) |
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin |
(Eng)
|
|
Ryabtsev S.V., Chuvenkova O.A., Kannykin S.V., Popov A.E., Ryabtseva N.S., Voischev S.S., Turishchev S.Y., Domashevskaya E.P.
|
| Vol 50, No 1 (2016) |
Optical properties of PbS thin films |
(Eng)
|
|
Akhmedov O.R., Guseinaliyev M.G., Abdullaev N.A., Abdullaev N.M., Babaev S.S., Kasumov N.A.
|
| Vol 50, No 1 (2016) |
Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing |
(Eng)
|
|
Yafarov R.K., Shanygin V.Y.
|
| Vol 50, No 1 (2016) |
Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films |
(Eng)
|
|
Zaynabidinov S.Z., Saidov A.S., Leiderman A.Y., Kalanov M.U., Usmonov S.N., Rustamova V.M., Boboev A.Y.
|
| 76 - 83 of 83 Items |
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