| Шығарылым |
Атауы |
Файл |
| Том 52, № 6 (2018) |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
(Eng)
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Kalinkin I., Kukushkin S., Osipov A.
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| Том 52, № 6 (2018) |
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation |
(Eng)
|
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Yakovlev S., Ankudinov A., Vorobyov Y., Voronov M., Kozyukhin S., Melekh B., Pevtsov A.
|
| Том 52, № 6 (2018) |
Variation in the Conductivity of Polyaniline Nanotubes During Their Formation |
(Eng)
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Kapralova V., Sapurina I., Sudar’ N.
|
| Том 52, № 3 (2018) |
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures |
(Eng)
|
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Galiev G., Klimov E., Klochkov A., Pushkarev S., Maltsev P.
|
| Том 52, № 3 (2018) |
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization |
(Eng)
|
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Agekyan V., Borisov E., Gudovskikh A., Kudryashov D., Monastyrenko A., Serov A., Filosofov N.
|
| Том 52, № 3 (2018) |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
(Eng)
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Esin M., Nikiforov A., Timofeev V., Tuktamyshev A., Mashanov V., Loshkarev I., Deryabin A., Pchelyakov O.
|
| Том 52, № 3 (2018) |
Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte |
(Eng)
|
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Li G., Pavlov S., Astrova E., Preobrazhenskiy N.
|
| Том 52, № 2 (2018) |
Luminescence Properties of CdxZn1 – xO Thin Films |
(Eng)
|
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Lotin A., Novodvorsky O., Parshina L., Khramova O., Cherebylo E., Mikhalevsky V.
|
| Том 52, № 2 (2018) |
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics |
(Eng)
|
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Shimanskii A., Pavlyuk T., Kopytkova S., Filatov R., Gorodishcheva A.
|
| Том 52, № 2 (2018) |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
(Eng)
|
|
Tyschenko I., Krivyakin G., Volodin V.
|
| Том 52, № 2 (2018) |
Electrical Activity of Extended Defects in Multicrystalline Silicon |
(Eng)
|
|
Pescherova S., Yakimov E., Nepomnyashchikh A., Pavlova L., Feklisova O., Presnyakov R.
|
| Том 52, № 1 (2018) |
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells |
(Eng)
|
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Alekseev A., Al-Afeef A., Hedley G., Kharintsev S., Efimov A., Yedrisov A., Dyuzhev N., Samuel I.
|
| Том 52, № 1 (2018) |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
(Eng)
|
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Seredin P., Lenshin A., Fedyukin A., Arsentyev I., Zhabotinsky A., Nikolaev D., Leiste H., Rinke M.
|
| Том 52, № 1 (2018) |
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
(Eng)
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Belyaev A., Antipov V., Rubets V.
|
| Том 52, № 1 (2018) |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
(Eng)
|
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Solov’ev V., Chernov M., Sitnikova A., Brunkov P., Meltser B., Ivanov S.
|
| Том 52, № 1 (2018) |
Investigation of the Modified Structure of a Quantum Cascade Laser |
(Eng)
|
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Mamutin V., Maleev N., Vasilyev A., Ilyinskaya N., Zadiranov Y., Usikova A., Yagovkina M., Shernyakov Y., Ustinov V.
|
| Том 52, № 1 (2018) |
On a New Mechanism for the Realization of Ohmic Contacts |
(Eng)
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Sachenko A., Belyaev A., Konakova R.
|
| Том 51, № 12 (2017) |
Patterning approach for detecting defect in device manufacturing |
(Eng)
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Vikram A., Agarwal V.
|
| Том 51, № 12 (2017) |
The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode |
(Eng)
|
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Ganiyev S., Azim Khairi M., Ahmad Fauzi D., Abdullah Y., Hasbullah N.
|
| Том 51, № 10 (2017) |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
(Eng)
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Tyschenko I., Cherkov A.
|
| Том 51, № 10 (2017) |
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |
(Eng)
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Krivyakin G., Volodin V., Shklyaev A., Mortet V., More-Chevalier J., Ashcheulov P., Remes Z., Stuchliková T., Stuchlik J.
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| Том 51, № 10 (2017) |
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures |
(Eng)
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Alfimova D., Lunin L., Lunina M., Arustamyan D., Kazakova A., Chebotarev S.
|
| Том 51, № 10 (2017) |
(FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap |
(Eng)
|
|
Bodnar I., Barugu T., Kasyuk Y., Fedotova Y.
|
| Том 51, № 9 (2017) |
Formation of low-dimensional structures in the InSb/AlAs heterosystem |
(Eng)
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Abramkin D., Bakarov A., Putyato M., Emelyanov E., Kolotovkina D., Gutakovskii A., Shamirzaev T.
|
| Том 51, № 9 (2017) |
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films |
(Eng)
|
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Tyschenko I., Cherkov A., Volodin V., Voelskow M.
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| Нәтижелер 135 - 51/75 |
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