| Edição |
Título |
Arquivo |
| Volume 52, Nº 6 (2018) |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
(Eng)
|
|
Ivanova M., Kachemtsev A., Mikhaylov A., Filatov D., Gorshkov A., Volkova N., Chalkov V., Shengurov V.
|
| Volume 52, Nº 6 (2018) |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
(Eng)
|
|
Kalinkin I., Kukushkin S., Osipov A.
|
| Volume 52, Nº 6 (2018) |
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation |
(Eng)
|
|
Yakovlev S., Ankudinov A., Vorobyov Y., Voronov M., Kozyukhin S., Melekh B., Pevtsov A.
|
| Volume 52, Nº 3 (2018) |
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures |
(Eng)
|
|
Galiev G., Klimov E., Klochkov A., Pushkarev S., Maltsev P.
|
| Volume 52, Nº 3 (2018) |
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization |
(Eng)
|
|
Agekyan V., Borisov E., Gudovskikh A., Kudryashov D., Monastyrenko A., Serov A., Filosofov N.
|
| Volume 52, Nº 3 (2018) |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
(Eng)
|
|
Esin M., Nikiforov A., Timofeev V., Tuktamyshev A., Mashanov V., Loshkarev I., Deryabin A., Pchelyakov O.
|
| Volume 52, Nº 3 (2018) |
Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte |
(Eng)
|
|
Li G., Pavlov S., Astrova E., Preobrazhenskiy N.
|
| Volume 52, Nº 2 (2018) |
Electrical Activity of Extended Defects in Multicrystalline Silicon |
(Eng)
|
|
Pescherova S., Yakimov E., Nepomnyashchikh A., Pavlova L., Feklisova O., Presnyakov R.
|
| Volume 52, Nº 2 (2018) |
Luminescence Properties of CdxZn1 – xO Thin Films |
(Eng)
|
|
Lotin A., Novodvorsky O., Parshina L., Khramova O., Cherebylo E., Mikhalevsky V.
|
| Volume 52, Nº 2 (2018) |
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics |
(Eng)
|
|
Shimanskii A., Pavlyuk T., Kopytkova S., Filatov R., Gorodishcheva A.
|
| Volume 52, Nº 2 (2018) |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
(Eng)
|
|
Tyschenko I., Krivyakin G., Volodin V.
|
| Volume 52, Nº 1 (2018) |
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
(Eng)
|
|
Belyaev A., Antipov V., Rubets V.
|
| Volume 52, Nº 1 (2018) |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
(Eng)
|
|
Solov’ev V., Chernov M., Sitnikova A., Brunkov P., Meltser B., Ivanov S.
|
| Volume 52, Nº 1 (2018) |
Investigation of the Modified Structure of a Quantum Cascade Laser |
(Eng)
|
|
Mamutin V., Maleev N., Vasilyev A., Ilyinskaya N., Zadiranov Y., Usikova A., Yagovkina M., Shernyakov Y., Ustinov V.
|
| Volume 52, Nº 1 (2018) |
On a New Mechanism for the Realization of Ohmic Contacts |
(Eng)
|
|
Sachenko A., Belyaev A., Konakova R.
|
| Volume 52, Nº 1 (2018) |
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells |
(Eng)
|
|
Alekseev A., Al-Afeef A., Hedley G., Kharintsev S., Efimov A., Yedrisov A., Dyuzhev N., Samuel I.
|
| Volume 52, Nº 1 (2018) |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
(Eng)
|
|
Seredin P., Lenshin A., Fedyukin A., Arsentyev I., Zhabotinsky A., Nikolaev D., Leiste H., Rinke M.
|
| Volume 51, Nº 12 (2017) |
Patterning approach for detecting defect in device manufacturing |
(Eng)
|
|
Vikram A., Agarwal V.
|
| Volume 51, Nº 12 (2017) |
The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode |
(Eng)
|
|
Ganiyev S., Azim Khairi M., Ahmad Fauzi D., Abdullah Y., Hasbullah N.
|
| Volume 51, Nº 10 (2017) |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
(Eng)
|
|
Tyschenko I., Cherkov A.
|
| Volume 51, Nº 10 (2017) |
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |
(Eng)
|
|
Krivyakin G., Volodin V., Shklyaev A., Mortet V., More-Chevalier J., Ashcheulov P., Remes Z., Stuchliková T., Stuchlik J.
|
| Volume 51, Nº 10 (2017) |
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures |
(Eng)
|
|
Alfimova D., Lunin L., Lunina M., Arustamyan D., Kazakova A., Chebotarev S.
|
| Volume 51, Nº 10 (2017) |
(FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap |
(Eng)
|
|
Bodnar I., Barugu T., Kasyuk Y., Fedotova Y.
|
| Volume 51, Nº 9 (2017) |
Formation of low-dimensional structures in the InSb/AlAs heterosystem |
(Eng)
|
|
Abramkin D., Bakarov A., Putyato M., Emelyanov E., Kolotovkina D., Gutakovskii A., Shamirzaev T.
|
| Volume 51, Nº 9 (2017) |
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films |
(Eng)
|
|
Tyschenko I., Cherkov A., Volodin V., Voelskow M.
|
| 51 - 75 de 135 resultados |
<< < 1 2 3 4 5 6 > >>
|
