| Issue |
Title |
File |
| Vol 52, No 11 (2018) |
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells |
(Eng)
|
|
Dobretsova A.A., Kvon Z.D., Braginskii L.S., Entin M.V., Mikhailov N.N.
|
| Vol 52, No 11 (2018) |
Spinodal Decomposition in InSb/AlAs Heterostructures |
(Eng)
|
|
Abramkin D.S., Bakarov A.K., Gutakovskii A.K., Shamirzaev T.S.
|
| Vol 52, No 11 (2018) |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
(Eng)
|
|
Okhapkin A.I., Yunin P.A., Drozdov M.N., Kraev S.A., Skorokhodov E.V., Shashkin V.I.
|
| Vol 52, No 11 (2018) |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
(Eng)
|
|
Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Antonov I.N.
|
| Vol 52, No 11 (2018) |
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation |
(Eng)
|
|
Khananova A.V., Obolensky S.V.
|
| Vol 52, No 11 (2018) |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
(Eng)
|
|
Gudina S.V., Bogolyubskii A.S., Neverov V.N., Shelushinina N.G., Yakunin M.V.
|
| Vol 52, No 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
(Eng)
|
|
Abramkin D.S., Petrushkov M.O., Putyato M.A., Semyagin B.R., Shamirzaev T.S.
|
| Vol 52, No 11 (2018) |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
(Eng)
|
|
Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
| Vol 52, No 11 (2018) |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
(Eng)
|
|
Drozdov Y.N., Khrikin O.I., Yunin P.A.
|
| Vol 52, No 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
(Eng)
|
|
Yunin P.A., Drozdov Y.N., Khrykin O.I., Grigoryev V.A.
|
| Vol 52, No 11 (2018) |
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates |
(Eng)
|
|
Kudryatvsev K.E., Dubinov A.A., Aleshkin V.Y., Yurasov D.V., Gorlachuk P.V., Ryaboshtan Y.L., Marmalyuk A.A., Novikov A.V., Krasilnik Z.F.
|
| Vol 52, No 11 (2018) |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
(Eng)
|
|
Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kirilenko D.A., Kryzhanovskaya N.V.
|
| Vol 52, No 11 (2018) |
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond |
(Eng)
|
|
Bekin N.A.
|
| Vol 52, No 11 (2018) |
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region |
(Eng)
|
|
Morozov K.M., Ivanov K.A., Selenin N., Mikhrin S., de Sa Pereira D., Menelaou C., Monkman A.P., Kaliteevski M.A.
|
| Vol 52, No 11 (2018) |
Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure |
(Eng)
|
|
Novodvorsky O.A., Mikhalevsky V.A., Gusev D.S., Lotin A.A., Parshina L.S., Khramova O.D., Cherebylo E.A., Drovosekov A.B., Rylkov V.V., Nikolaev S.N., Chernoglazov K.Y., Maslakov K.I.
|
| Vol 52, No 11 (2018) |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
(Eng)
|
|
Alexeev P.A., Cirlin G.E., Reznik R.R., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Lebedev S.P., Lebedev A.A., Kirilenko D.A.
|
| Vol 52, No 11 (2018) |
Study of the Structural and Morphological Properties of HPHT Diamond Substrates |
(Eng)
|
|
Yunin P.A., Volkov P.V., Drozdov Y.N., Koliadin A.V., Korolev S.A., Radischev D.B., Surovegina E.A., Shashkin V.I.
|
| 26 - 42 of 42 Items |
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