| 期 |
标题 |
文件 |
| 卷 52, 编号 11 (2018) |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
(Eng)
|
|
Okhapkin A., Yunin P., Drozdov M., Kraev S., Skorokhodov E., Shashkin V.
|
| 卷 52, 编号 11 (2018) |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
(Eng)
|
|
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Antonov I.
|
| 卷 52, 编号 11 (2018) |
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation |
(Eng)
|
|
Khananova A., Obolensky S.
|
| 卷 52, 编号 11 (2018) |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
(Eng)
|
|
Gudina S., Bogolyubskii A., Neverov V., Shelushinina N., Yakunin M.
|
| 卷 52, 编号 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
(Eng)
|
|
Abramkin D., Petrushkov M., Putyato M., Semyagin B., Shamirzaev T.
|
| 卷 52, 编号 11 (2018) |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
(Eng)
|
|
Puzanov A., Obolenskiy S., Kozlov V.
|
| 卷 52, 编号 11 (2018) |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
(Eng)
|
|
Drozdov Y., Khrikin O., Yunin P.
|
| 卷 52, 编号 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
(Eng)
|
|
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
|
| 卷 52, 编号 11 (2018) |
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates |
(Eng)
|
|
Kudryatvsev K., Dubinov A., Aleshkin V., Yurasov D., Gorlachuk P., Ryaboshtan Y., Marmalyuk A., Novikov A., Krasilnik Z.
|
| 卷 52, 编号 11 (2018) |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
(Eng)
|
|
Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kotlyar K., Ilkiv I., Soshnikov I., Kirilenko D., Kryzhanovskaya N.
|
| 卷 52, 编号 11 (2018) |
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond |
(Eng)
|
|
Bekin N.
|
| 卷 52, 编号 11 (2018) |
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region |
(Eng)
|
|
Morozov K., Ivanov K., Selenin N., Mikhrin S., de Sa Pereira D., Menelaou C., Monkman A., Kaliteevski M.
|
| 卷 52, 编号 11 (2018) |
Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure |
(Eng)
|
|
Novodvorsky O., Mikhalevsky V., Gusev D., Lotin A., Parshina L., Khramova O., Cherebylo E., Drovosekov A., Rylkov V., Nikolaev S., Chernoglazov K., Maslakov K.
|
| 卷 52, 编号 11 (2018) |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
(Eng)
|
|
Alexeev P., Cirlin G., Reznik R., Kotlyar K., Ilkiv I., Soshnikov I., Lebedev S., Lebedev A., Kirilenko D.
|
| 卷 52, 编号 11 (2018) |
Study of the Structural and Morphological Properties of HPHT Diamond Substrates |
(Eng)
|
|
Yunin P., Volkov P., Drozdov Y., Koliadin A., Korolev S., Radischev D., Surovegina E., Shashkin V.
|
| 卷 52, 编号 11 (2018) |
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots |
(Eng)
|
|
Derebezov I., Gaisler V., Gaisler A., Dmitriev D., Toropov A., von Helversen M., de la Haye C., Bounouar S., Reitzenstein S.
|
| 卷 52, 编号 11 (2018) |
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics |
(Eng)
|
|
Novikov A., Yurasov D., Morozova E., Skorohodov E., Verbus V., Yablonskiy A., Baidakova N., Gusev N., Kudryavtsev K., Nezhdanov A., Mashin A.
|
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