| Шығарылым |
Атауы |
Файл |
| Том 53, № 12 (2019) |
Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures |
(Eng)
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Ataeva S., Mekhtieva S., Isaev A., Garibova S., Huseynova A.
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| Том 53, № 12 (2019) |
Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix |
(Eng)
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Castro R., Khanin S., Smirnov A., Kononov A.
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| Том 53, № 12 (2019) |
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor |
(Eng)
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Sovtus N., Mynbaev K.
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| Том 53, № 12 (2019) |
Synthesis and Characterization of Semiconductor Polymer Doped with FeCl3 and I2 |
(Eng)
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Bouabdallah Daho ., Fontanesi C., Messori M., Dehbi A., Belfedal A.
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| Том 53, № 11 (2019) |
Spectra of SmS Films in the Far- and Mid-Infrared Regions |
(Eng)
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Ulashkevich Y., Kaminski V., Soloviev S., Sharenkova N.
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| Том 53, № 11 (2019) |
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %) |
(Eng)
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Undalov Y., Terukov E., Trapeznikova I.
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| Том 53, № 11 (2019) |
Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System |
(Eng)
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Isayev A., Mekhtiyeva S., Mammadova H., Alekberov R.
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| Том 53, № 11 (2019) |
Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity |
(Eng)
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Garibova S., Isayev A., Mekhtiyeva S., Atayeva S.
|
| Том 53, № 7 (2019) |
Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction |
(Eng)
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Guseva E., Forsh E.
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| Том 53, № 5 (2019) |
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses |
(Eng)
|
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Marchenko A., Seregin P., Terukov E., Shakhovich K.
|
| Том 53, № 1 (2019) |
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films |
(Eng)
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Elistratova M., Zakharova I., Li G., Dubrovin R., Sreseli O.
|
| Том 52, № 13 (2018) |
Specific Features of the Electron Structure of ZnTPP Aggregated Forms: Data of Optical Measurements and Quantum-Chemical Calculations |
(Eng)
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Zakharova I., Elistratova M., Romanov N., Kvyatkovskii O.
|
| Том 52, № 12 (2018) |
Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe |
(Eng)
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Fefelov S., Kazakova L., Bogoslovskiy N., Tsendin K.
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| Том 52, № 10 (2018) |
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) |
(Eng)
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|
Undalov Y., Terukov E., Trapeznikova I.
|
| Том 52, № 9 (2018) |
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System |
(Eng)
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Castro R., Grabko G., Kononov A.
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| Том 52, № 8 (2018) |
Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System |
(Eng)
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Castro R., Anisimova N., Kononov A.
|
| Том 52, № 1 (2018) |
On the Electret Effect in Polymer–Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations |
(Eng)
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Kurbanov M., Ramazanova I., Dadashev Z., Yusifova U., Huseynova G., Azizova K., Farajzadeh I.
|
| Том 51, № 6 (2017) |
Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor |
(Eng)
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Mekhtiyeva S., Atayeva S., Isayev A., Zeynalov V.
|
| Том 51, № 5 (2017) |
Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals |
(Eng)
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Kurochkin N., Katsaba A., Ambrozevich S., Vitukhnovsky A., Vashchenko A., Tananaev P.
|
| Том 51, № 4 (2017) |
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide |
(Eng)
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Marchenko A., Terukov E., Egorova A., Kiselev V., Seregin P.
|
| Том 50, № 9 (2016) |
Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes |
(Eng)
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Elistratova M., Zakharova I., Romanov N., Panevin V., Kvyatkovskii O.
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| Том 50, № 7 (2016) |
Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode |
(Eng)
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Fefelov S., Kazakova L., Arsova D., Kozyukhin S., Tsendin K., Prikhodko O.
|
| Том 50, № 6 (2016) |
Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen |
(Eng)
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Ivanova E., Sitnikova A., Aleksandrov O., Zamoryanskaya M.
|
| Том 50, № 5 (2016) |
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites |
(Eng)
|
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Mamedov H., Parali L., Kurbanov M., Bayramov A., Tatardar F., Sabikoglu I.
|
| Том 50, № 5 (2016) |
Lifetime of excitons localized in Si nanocrystals in amorphous silicon |
(Eng)
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Gusev O., Belolipetskiy A., Yassievich I., Kukin A., Terukova E., Terukov E.
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