Мақаланы E-mail арқылы жіберу Luminescence of MoSe2: effect of temperature and pumping value
- Авторлар: Bisti V.E1, Brichkin A.S1, Golyshkov G.M1, Chernenko A.V1
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Мекемелер:
- Osipyan Institute of Solid State Physics of the Russian Academy of Sciences
- Шығарылым: Том 89, № 2 (2025)
- Беттер: 211–214
- Бөлім: New Materials and Technologies for Security Systems
- URL: https://ogarev-online.ru/0367-6765/article/view/296632
- DOI: https://doi.org/10.31857/S0367676525020106
- EDN: https://elibrary.ru/CXDOCC
- ID: 296632
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The luminescence of excitons and trions in a MoSe monolayer encapsulated with hBN was studied under non-resonant photoexcitation of electron-hole pairs depending on the temperature and pumping intensity. The shift of luminescence lines and the redistribution of intensities can be explained by the influence of both the Fermi gas of free electrons and localized states of electrons caused by the presence of impurities in boron nitride hBN.
Негізгі сөздер
Авторлар туралы
V. Bisti
Osipyan Institute of Solid State Physics of the Russian Academy of Sciences
Email: bisti@issp.ac.ru
Chernogolovka, Russia
A. Brichkin
Osipyan Institute of Solid State Physics of the Russian Academy of SciencesChernogolovka, Russia
G. Golyshkov
Osipyan Institute of Solid State Physics of the Russian Academy of SciencesChernogolovka, Russia
A. Chernenko
Osipyan Institute of Solid State Physics of the Russian Academy of SciencesChernogolovka, Russia
Әдебиет тізімі
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