Luminescence of MoSe2: effect of temperature and pumping value

Cover Page

Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The luminescence of excitons and trions in a MoSe monolayer encapsulated with hBN was studied under non-resonant photoexcitation of electron-hole pairs depending on the temperature and pumping intensity. The shift of luminescence lines and the redistribution of intensities can be explained by the influence of both the Fermi gas of free electrons and localized states of electrons caused by the presence of impurities in boron nitride hBN.

About the authors

V. E Bisti

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Email: bisti@issp.ac.ru
Chernogolovka, Russia

A. S Brichkin

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Chernogolovka, Russia

G. M Golyshkov

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Chernogolovka, Russia

A. V Chernenko

Osipyan Institute of Solid State Physics of the Russian Academy of Sciences

Chernogolovka, Russia

References

  1. Wang G., Chernikov A., Glazov M.M. et al. // Rev. Mod. Phys. 2018. V. 90. Art. No. 021001.
  2. Durnev M.V., Glazov M.M. // Phys. Usp. 2018. V. 61. No. 9. P. 825.
  3. Glazov M.M. // J. Chem. Phys. 2020. Art. No. 153034703.
  4. Gillen R., Robertson J., Maultzsch J. // Phys. Stat. Sol. B. 2014. V. 251. P. 2620.
  5. Vokhmintsev A.S., Weinstein I.A. // J. Luminescence. 2021. V. 230. Art. No. 117623.
  6. Wang Z., Chiu Y.-H., Honz K. et al. // Nano Lett. 2018. V. 18. No. 1. P. 137.
  7. Efimkin D.K., MacDonald A.H. // Phys. Rev. B. 2017. V. 95. Art. No. 035417.
  8. Semina M.A., Suris R.A. // Phys. Usp. 2022. V. 65. No 2. P. 111.
  9. Fey C., Schmelcher P., Imamoglu A., Schmidt R. // Phys. Rev. B. 2020. V. 101. Art. No. 195417.
  10. Wagner K., Wietek E., Ziegler J.D. et al. // Phys. Rev. Lett. 2020. V. 125. Art. No. 267401.
  11. O’Donnell K.P., Chen X. // Appl. Phys. Lett. 1991. V. 58. No. 25. P. 2924.
  12. Ross J.S., Wu S., Yu H. et al. // Nature Commun. 2013. V. 4. Art. No. 1474.
  13. Голышков Г.М, Бричкин А.С., Черненко А.В. // Физ. и техн. полупровод. 2024. Т. 58. № 5. С. 233.
  14. Chernenko A.V., Brichkin A.S., Golyshkov G.M. // Bull. Russ. Acad. Sci. Phys. 2024. V. 88. No. 2. P. 209.
  15. Volkov O.V., Zhitomirski V.E., Kukushkin I. V. et al. // JETP Lett. 1997. V. 66. No. 11. P. 730.
  16. Volkov O.V., Kukushkin I.V., von Klitzing K., Eberl K. // JETP Lett. 1998. V. 68. No 3. P. 236.
  17. Zipfel J., Wagner K., Semina M.A. et al. // Phys. Rev. B. 2022. V. 105. Art. No. 075311.
  18. Onodera M., Isayama M., Taniguchi T. et al. // Carbon. 2020. V. 167. P. 785.
  19. Maity A., Grenadier S.J., Li J. et al. // Progr. Quantum Electron. 2021. V. 76. Art. No. 100302.

Supplementary files

Supplementary Files
Action
1. JATS XML
Download

Copyright (c) 2025 Russian Academy of Sciences

Согласие на обработку персональных данных

 

Используя сайт https://journals.rcsi.science, я (далее – «Пользователь» или «Субъект персональных данных») даю согласие на обработку персональных данных на этом сайте (текст Согласия) и на обработку персональных данных с помощью сервиса «Яндекс.Метрика» (текст Согласия).