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Investigation of the possibility of using island SERS-structures on a GaP substrate for surface-enhanced inelastic light scattering in the infrared frequency range
- Authors: Makarovskaya S.M1, Soloviev V.V1, Rudakov T.D1, Kukushkin I.V1
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Affiliations:
- Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
- Issue: Vol 89, No 2 (2025)
- Pages: 232–236
- Section: New Materials and Technologies for Security Systems
- URL: https://ogarev-online.ru/0367-6765/article/view/296636
- DOI: https://doi.org/10.31857/S0367676525020143
- EDN: https://elibrary.ru/CWRYRZ
- ID: 296636
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Abstract
We studied the properties of GaP-based periodic dielectric structures with a silver layer coating which can enhance the signal of surface-enhanced inelastic light scattering (SERS). The dependences of the scattering signal intensity on the period for different structure heights were obtained. A comparison of the scattering signal intensities for SiO2 and GaP SERS-structures for laser excitation wavelengths of 532, 785 and 1064 nm was performed. The ability of GaP-based structures with a thin metal layer to enhance the signal by more than 7 orders of magnitude in the infrared frequency range was found. The dependence of the Raman signal enhancement on the thickness of the deposited layer was studied.
About the authors
S. M Makarovskaya
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: svetlandij@issp.ac.ru
Chernogolovka, Russia
V. V Soloviev
Osipyan Institute of Solid-State Physics of the Russian Academy of SciencesChernogolovka, Russia
T. D Rudakov
Osipyan Institute of Solid-State Physics of the Russian Academy of SciencesChernogolovka, Russia
I. V Kukushkin
Osipyan Institute of Solid-State Physics of the Russian Academy of SciencesChernogolovka, Russia
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