Enviar artigo por via de e-mail Investigation of the possibility of using island SERS-structures on a GaP substrate for surface-enhanced inelastic light scattering in the infrared frequency range
- Autores: Makarovskaya S.M1, Soloviev V.V1, Rudakov T.D1, Kukushkin I.V1
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Afiliações:
- Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
- Edição: Volume 89, Nº 2 (2025)
- Páginas: 232–236
- Seção: New Materials and Technologies for Security Systems
- URL: https://ogarev-online.ru/0367-6765/article/view/296636
- DOI: https://doi.org/10.31857/S0367676525020143
- EDN: https://elibrary.ru/CWRYRZ
- ID: 296636
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Resumo
We studied the properties of GaP-based periodic dielectric structures with a silver layer coating which can enhance the signal of surface-enhanced inelastic light scattering (SERS). The dependences of the scattering signal intensity on the period for different structure heights were obtained. A comparison of the scattering signal intensities for SiO2 and GaP SERS-structures for laser excitation wavelengths of 532, 785 and 1064 nm was performed. The ability of GaP-based structures with a thin metal layer to enhance the signal by more than 7 orders of magnitude in the infrared frequency range was found. The dependence of the Raman signal enhancement on the thickness of the deposited layer was studied.
Sobre autores
S. Makarovskaya
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: svetlandij@issp.ac.ru
Chernogolovka, Russia
V. Soloviev
Osipyan Institute of Solid-State Physics of the Russian Academy of SciencesChernogolovka, Russia
T. Rudakov
Osipyan Institute of Solid-State Physics of the Russian Academy of SciencesChernogolovka, Russia
I. Kukushkin
Osipyan Institute of Solid-State Physics of the Russian Academy of SciencesChernogolovka, Russia
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