Suppressionof the contribution ofintraband absorptionto the characteristic relaxation time ofthe narrowly directed partof stimulated picosecond emissionof the Al_xGa_1–xAs–GaAs–AlxGa_1–xAs heterostructure

It has been experimentally found that the return to the active region of the part of its own intense stimulated picosecond emission reflected from the end face of theAl_xGa_1–xAs–GaAs–AlxGa_1–xAs heterostructure leads to a significant reduction in the characteristic relaxation time of the narrowly directed portion of the generated emission. The reduction occurs due to the controlled reduction, upto the disappearance, of the contribution to the characteristic time created by the absorption of emission by free charge carriers.