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Obtaining analytical expressions for the characteristics of field-effect transistors using a special Lambert function
- Authors: Kitaev A.E.1
-
Affiliations:
- JSC “Nizhnii Novgorod Scientific and Production Association named after M.V.Frunze”
- Issue: Vol 70, No 11 (2025)
- Pages: 1109-1114
- Section: ТЕОРИЯ РАДИОТЕХНИЧЕСКИХ ЦЕПЕЙ
- URL: https://ogarev-online.ru/0033-8494/article/view/368156
- DOI: https://doi.org/10.7868/S3034590125110102
- ID: 368156
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Abstract
Analytical expressions are obtained for the characteristics of junction-gate field-effect transistors and internal-channel MOSFETs (transistors with both an n-channel and ap-channel are considered). Instead of the hyperbolic tangent function, which is used in the well-known Curtice-Ettenberg model, the new expressions are based on the volt-ampere characteristic of a semiconductor diode with ohmic resistance (using a special Lambert function). These expressions describe both linear mode, saturation mode, and cutoff mode. Four parameters are used. A method for accounting for the slope of the characteristics is also proposed (while adding another parameter). Examples of graphs constructed using the obtained expressions are presented.
About the authors
A. E. Kitaev
JSC “Nizhnii Novgorod Scientific and Production Association named after M.V.Frunze”
Email: kitaev_a_e@mail.ru
Nizhnii Novgorod, 606950
References
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- Dubinov, A.E., Dubinova, I.D., and Saikov, S.K. The Lambert W Function and Its Applications in Mathematical Problems of Physics. Sarov: RFNC-VNIIEF, 2006.
- Kitaev, A.E. Analytical Representation of the Characteristics of Solid-State Devices and Circuits Based on Them. PhD Dissertation in Physics and Mathematics. Nizhny Novgorod: NNSU, 2024, 148 p.
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