Development of Wireless Communication Systems in the Subterahertz Frequency Range
- Autores: Biryukov V.V.1, Vaks V.L.1,2, Kisilenko K.I.1, Panin A.N.1,2, Pripolzin S.I.1,2, Raevsky A.S.1, Shcherbakov V.1
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Afiliações:
- Nizhny Novgorod State Technical University n.a. R.E. Alekseev
- Institute for Physics of Microstructures of the Russian Academy of Sciences
- Edição: Volume 61, Nº 10 (2019)
- Páginas: 763-772
- Seção: Article
- URL: https://ogarev-online.ru/0033-8443/article/view/243925
- DOI: https://doi.org/10.1007/s11141-019-09934-5
- ID: 243925
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Resumo
The subterahertz and terahertz frequency ranges are promising for the creation of high-speed wireless communication systems because of the possibility to achieve a bandwidth of about several dozen gigahertz, which ensures a high channel capacity. However, rapid attenuation of a signal during its propagation in the atmosphere complicates the operation of communication systems in these ranges. The use of fixed narrow-beam antennas with a high power gain provides a direct surface communication distance of up to a few kilometers. The communication distance limitation can be partially removed by decreasing the frequency down to 200 GHz and narrowing the channel bandwidth down to a few gigahertz. In this paper, we present a radically new approach that was developed to create a wideband (up to one gigahertz) communication channel based on rapid modulation of a centimeter wavelength signal followed by the carrier-frequency multiplication up to 230 GHz without the modulating-signal distortion. This approach was not used in the previous communication systems. The model of a transmit–receive system (200–220 GHz) based on modern semiconductor devices is described in detail. The possibility of digital signal transmission at a speed of up to 1 Gbit/s is experimentally shown. According to calculations, an output power of the transmitter about several hundreds of microwatt is enough for data transmission to a distance of up to 1.5 km with an antenna gain of no less than 50 dB.
Sobre autores
V. Biryukov
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Email: raevsky@nntu.ru
Rússia, Nizhny Novgorod
V. Vaks
Nizhny Novgorod State Technical University n.a. R.E. Alekseev; Institute for Physics of Microstructures of the Russian Academy of Sciences
Email: raevsky@nntu.ru
Rússia, Nizhny Novgorod; Nizhny Novgorod
K. Kisilenko
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Email: raevsky@nntu.ru
Rússia, Nizhny Novgorod
A. Panin
Nizhny Novgorod State Technical University n.a. R.E. Alekseev; Institute for Physics of Microstructures of the Russian Academy of Sciences
Email: raevsky@nntu.ru
Rússia, Nizhny Novgorod; Nizhny Novgorod
S. Pripolzin
Nizhny Novgorod State Technical University n.a. R.E. Alekseev; Institute for Physics of Microstructures of the Russian Academy of Sciences
Email: raevsky@nntu.ru
Rússia, Nizhny Novgorod; Nizhny Novgorod
A. Raevsky
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Autor responsável pela correspondência
Email: raevsky@nntu.ru
Rússia, Nizhny Novgorod
V.V. Shcherbakov
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Email: raevsky@nntu.ru
Rússia, Nizhny Novgorod
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