Мақаланы E-mail арқылы жіберу Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique
- Авторлар: Blokhin S.A.1, Bobrov M.A.1, Blokhin A.A.1,2, Kuzmenkov A.G.2, Maleev N.A.1, Ustinov V.M.2, Kolodeznyi E.S.3, Rochas S.S.3, Babichev A.V.3, Novikov I.I.3, Gladyshev A.G.3, Karachinsky L.Y.1,4, Denisov D.V.4,5, Voropaev K.O.6,7, Ionov A.S.7, Egorov A.Y.3
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Мекемелер:
- Ioffe Physical Technical Institute
- The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
- ITMO University
- OOO Connector Optics
- St. Petersburg Electrotechnical University LETI
- Yaroslav-the-Wise Novgorod State University
- OAO OKB-Planeta
- Шығарылым: Том 127, № 1 (2019)
- Беттер: 140-144
- Бөлім: Laser Physics and Laser Optics
- URL: https://ogarev-online.ru/0030-400X/article/view/166045
- DOI: https://doi.org/10.1134/S0030400X1907004X
- ID: 166045
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Аннотация
The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design of the laser provides a record low level of internal optical losses (less than 6.5 cm–1) and high efficiency of current injection (more than 90%) at room temperature, which allows the realization of submilliampere threshold currents. As the temperature rises to 85°C, the current injection efficiency drops to 70% due to the thermal emission of charge carriers from the active region, accompanied by an increase in internal optical losses to 9.1 cm–1 because of an increase in absorption on free carriers and/or intersubband absorption in the valence band.
Негізгі сөздер
Авторлар туралы
S. Blokhin
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Bobrov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Blokhin
Ioffe Physical Technical Institute; The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
A. Kuzmenkov
The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Maleev
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Ustinov
The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
E. Kolodeznyi
ITMO University
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 197101
S. Rochas
ITMO University
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 197101
A. Babichev
ITMO University
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 197101
I. Novikov
ITMO University
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 197101
A. Gladyshev
ITMO University
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 197101
L. Karachinsky
Ioffe Physical Technical Institute; OOO Connector Optics
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194292
D. Denisov
OOO Connector Optics; St. Petersburg Electrotechnical University LETI
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 194292; St. Petersburg, 197376
K. Voropaev
Yaroslav-the-Wise Novgorod State University; OAO OKB-Planeta
Email: blokh@mail.ioffe.ru
Ресей, Veliky Novgorod, 173003; Veliky Novgorod, 173004
A. Ionov
OAO OKB-Planeta
Email: blokh@mail.ioffe.ru
Ресей, Veliky Novgorod, 173004
A. Egorov
ITMO University
Email: blokh@mail.ioffe.ru
Ресей, St. Petersburg, 197101
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