Отправить статью по E-mail Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique
- Авторы: Blokhin S.A.1, Bobrov M.A.1, Blokhin A.A.1,2, Kuzmenkov A.G.2, Maleev N.A.1, Ustinov V.M.2, Kolodeznyi E.S.3, Rochas S.S.3, Babichev A.V.3, Novikov I.I.3, Gladyshev A.G.3, Karachinsky L.Y.1,4, Denisov D.V.4,5, Voropaev K.O.6,7, Ionov A.S.7, Egorov A.Y.3
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Учреждения:
- Ioffe Physical Technical Institute
- The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
- ITMO University
- OOO Connector Optics
- St. Petersburg Electrotechnical University LETI
- Yaroslav-the-Wise Novgorod State University
- OAO OKB-Planeta
- Выпуск: Том 127, № 1 (2019)
- Страницы: 140-144
- Раздел: Laser Physics and Laser Optics
- URL: https://ogarev-online.ru/0030-400X/article/view/166045
- DOI: https://doi.org/10.1134/S0030400X1907004X
- ID: 166045
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Аннотация
The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design of the laser provides a record low level of internal optical losses (less than 6.5 cm–1) and high efficiency of current injection (more than 90%) at room temperature, which allows the realization of submilliampere threshold currents. As the temperature rises to 85°C, the current injection efficiency drops to 70% due to the thermal emission of charge carriers from the active region, accompanied by an increase in internal optical losses to 9.1 cm–1 because of an increase in absorption on free carriers and/or intersubband absorption in the valence band.
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Об авторах
S. Blokhin
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Bobrov
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Blokhin
Ioffe Physical Technical Institute; The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
A. Kuzmenkov
The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Maleev
Ioffe Physical Technical Institute
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Ustinov
The Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
E. Kolodeznyi
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
S. Rochas
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
A. Babichev
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
I. Novikov
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
A. Gladyshev
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
L. Karachinsky
Ioffe Physical Technical Institute; OOO Connector Optics
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194292
D. Denisov
OOO Connector Optics; St. Petersburg Electrotechnical University LETI
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194292; St. Petersburg, 197376
K. Voropaev
Yaroslav-the-Wise Novgorod State University; OAO OKB-Planeta
Email: blokh@mail.ioffe.ru
Россия, Veliky Novgorod, 173003; Veliky Novgorod, 173004
A. Ionov
OAO OKB-Planeta
Email: blokh@mail.ioffe.ru
Россия, Veliky Novgorod, 173004
A. Egorov
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
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