Email this article Electroluminescence of Single InGaN/GaN Micropyramids
- Authors: Babichev A.V.1, Denisov D.V.2,3, Lavenus P.4, Jacopin G.5, Tchernycheva M.4, Julien F.H.4, Zhang H.4,5
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Affiliations:
- ITMO University
- St. Petersburg Electrotechnical University “LETI”
- St. Petersburg Academic University of the Russian Academy of Sciences
- Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud, Université Paris Saclay
- École Polytechnique Fédérale de Lausanne
- Issue: Vol 126, No 2 (2019)
- Pages: 118-123
- Section: Physical Optics
- URL: https://ogarev-online.ru/0030-400X/article/view/165926
- DOI: https://doi.org/10.1134/S0030400X19020036
- ID: 165926
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Abstract
The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.
About the authors
A. V. Babichev
ITMO University
Author for correspondence.
Email: a.babichev@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
D. V. Denisov
St. Petersburg Electrotechnical University “LETI”; St. Petersburg Academic University of the Russian Academy of Sciences
Email: a.babichev@mail.ioffe.ru
Russian Federation, St. Petersburg, 197376; St. Petersburg, 194021
P. Lavenus
Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,Université Paris Saclay
Email: a.babichev@mail.ioffe.ru
France, Orsay, 91405
G. Jacopin
École Polytechnique Fédérale de Lausanne
Email: a.babichev@mail.ioffe.ru
Switzerland, Lausanne, CH-1015
M. Tchernycheva
Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,Université Paris Saclay
Email: a.babichev@mail.ioffe.ru
France, Orsay, 91405
F. H. Julien
Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,Université Paris Saclay
Email: a.babichev@mail.ioffe.ru
France, Orsay, 91405
H. Zhang
Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,Université Paris Saclay; École Polytechnique Fédérale de Lausanne
Email: a.babichev@mail.ioffe.ru
France, Orsay, 91405; Lausanne, CH-1015
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