Electroluminescence of Single InGaN/GaN Micropyramids


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The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.

Sobre autores

A. Babichev

ITMO University

Autor responsável pela correspondência
Email: a.babichev@mail.ioffe.ru
Rússia, St. Petersburg, 197101

D. Denisov

St. Petersburg Electrotechnical University “LETI”; St. Petersburg Academic University of the Russian Academy of Sciences

Email: a.babichev@mail.ioffe.ru
Rússia, St. Petersburg, 197376; St. Petersburg, 194021

P. Lavenus

Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,
Université Paris Saclay

Email: a.babichev@mail.ioffe.ru
França, Orsay, 91405

G. Jacopin

École Polytechnique Fédérale de Lausanne

Email: a.babichev@mail.ioffe.ru
Suíça, Lausanne, CH-1015

M. Tchernycheva

Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,
Université Paris Saclay

Email: a.babichev@mail.ioffe.ru
França, Orsay, 91405

F. Julien

Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,
Université Paris Saclay

Email: a.babichev@mail.ioffe.ru
França, Orsay, 91405

H. Zhang

Centre for Nanoscience and Nanotechnology (C2N Orsay), CNRS UMR9001, Université Paris Sud,
Université Paris Saclay; École Polytechnique Fédérale de Lausanne

Email: a.babichev@mail.ioffe.ru
França, Orsay, 91405; Lausanne, CH-1015

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