电邮这篇文章 Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles
- 作者: Kosarev A.N.1,2,3, Chaldyshev V.V.1,2,4, Kondikov A.A.1,4, Vartanyan T.A.4, Toropov N.A.4, Gladskikh I.A.4, Gladskikh P.V.4, Akimov I.1,3, Bayer M.1,3, Preobrazhenskii V.V.5, Putyato M.A.5, Semyagin B.R.5
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隶属关系:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- Experimentelle Physik 2, Technische Universität Dortmund
- ITMO University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- 期: 卷 126, 编号 5 (2019)
- 页面: 492-496
- 栏目: Optics of Low-Dimensional Structures, Mesostructures, and Metamaterials
- URL: https://ogarev-online.ru/0030-400X/article/view/165984
- DOI: https://doi.org/10.1134/S0030400X19050151
- ID: 165984
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详细
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.
作者简介
A. Kosarev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251; Dortmund, 44221
V. Chaldyshev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; ITMO University
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251; St. Petersburg, 197101
A. Kondikov
Ioffe Physical Technical Institute, Russian Academy of Sciences; ITMO University
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
T. Vartanyan
ITMO University
编辑信件的主要联系方式.
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 197101
N. Toropov
ITMO University
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 197101
I. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 197101
P. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 197101
I. Akimov
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 194021; Dortmund, 44221
M. Bayer
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, St. Petersburg, 194021; Dortmund, 44221
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, Novosibirsk, 630090
M. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, Novosibirsk, 630090
B. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
俄罗斯联邦, Novosibirsk, 630090
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