Enviar artigo por via de e-mail Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles
- Autores: Kosarev A.N.1,2,3, Chaldyshev V.V.1,2,4, Kondikov A.A.1,4, Vartanyan T.A.4, Toropov N.A.4, Gladskikh I.A.4, Gladskikh P.V.4, Akimov I.1,3, Bayer M.1,3, Preobrazhenskii V.V.5, Putyato M.A.5, Semyagin B.R.5
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Afiliações:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- Experimentelle Physik 2, Technische Universität Dortmund
- ITMO University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Edição: Volume 126, Nº 5 (2019)
- Páginas: 492-496
- Seção: Optics of Low-Dimensional Structures, Mesostructures, and Metamaterials
- URL: https://ogarev-online.ru/0030-400X/article/view/165984
- DOI: https://doi.org/10.1134/S0030400X19050151
- ID: 165984
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Resumo
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.
Sobre autores
A. Kosarev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251; Dortmund, 44221
V. Chaldyshev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; ITMO University
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251; St. Petersburg, 197101
A. Kondikov
Ioffe Physical Technical Institute, Russian Academy of Sciences; ITMO University
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
T. Vartanyan
ITMO University
Autor responsável pela correspondência
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 197101
N. Toropov
ITMO University
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 197101
I. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 197101
P. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 197101
I. Akimov
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 194021; Dortmund, 44221
M. Bayer
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Rússia, St. Petersburg, 194021; Dortmund, 44221
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Rússia, Novosibirsk, 630090
M. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Rússia, Novosibirsk, 630090
B. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Rússia, Novosibirsk, 630090
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