Room Temperature Optical Thermometry Based on the Luminescence of the SiV Defects in Diamond
- Авторы: Miller C.1, Puust L.1, Kiisk V.1, Ekimov E.2, Vlasov I.3, Orlovskii Y.1,3, Sildos I.1
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Учреждения:
- Institute of Physics, University of Tartu
- Institute for High Pressure Physics, RAS
- Prokhorov General Physics Institute RAS
- Выпуск: Том 126, № 1 (2019)
- Страницы: 59-61
- Раздел: Optical Sensors and Transducers
- URL: https://ogarev-online.ru/0030-400X/article/view/165917
- DOI: https://doi.org/10.1134/S0030400X19010119
- ID: 165917
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Аннотация
Diamond microcrystals containing silicon-vacancy (SiV) defects were synthesized by using a high-pressure high-temperature treatment of a mixture of pertinent organic-inorganic precursors. Photoluminescence of the SiV defects and its temperature dependence (80–400 K) was studied. A strong sharp zero-phonon line (ZPL) at 738 nm was recorded at all temperatures under 488 nm laser excitation. In particular the thermally induced shift of the ZPL was found promising for optical temperature sensing in the near infrared spectral range at biomedically relevant temperatures.
Об авторах
C. Miller
Institute of Physics, University of Tartu
Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411
L. Puust
Institute of Physics, University of Tartu
Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411
V. Kiisk
Institute of Physics, University of Tartu
Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411
E. Ekimov
Institute for High Pressure Physics, RAS
Email: ilmo.sildos@ut.ee
Россия, TroitskMoscow, 142190
I. Vlasov
Prokhorov General Physics Institute RAS
Email: ilmo.sildos@ut.ee
Россия, Moscow, 119991
Y. Orlovskii
Institute of Physics, University of Tartu; Prokhorov General Physics Institute RAS
Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411; Moscow, 119991
I. Sildos
Institute of Physics, University of Tartu
Автор, ответственный за переписку.
Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411
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