Room Temperature Optical Thermometry Based on the Luminescence of the SiV Defects in Diamond


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Аннотация

Diamond microcrystals containing silicon-vacancy (SiV) defects were synthesized by using a high-pressure high-temperature treatment of a mixture of pertinent organic-inorganic precursors. Photoluminescence of the SiV defects and its temperature dependence (80–400 K) was studied. A strong sharp zero-phonon line (ZPL) at 738 nm was recorded at all temperatures under 488 nm laser excitation. In particular the thermally induced shift of the ZPL was found promising for optical temperature sensing in the near infrared spectral range at biomedically relevant temperatures.

Авторлар туралы

C. Miller

Institute of Physics, University of Tartu

Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411

L. Puust

Institute of Physics, University of Tartu

Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411

V. Kiisk

Institute of Physics, University of Tartu

Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411

E. Ekimov

Institute for High Pressure Physics, RAS

Email: ilmo.sildos@ut.ee
Ресей, TroitskMoscow, 142190

I. Vlasov

Prokhorov General Physics Institute RAS

Email: ilmo.sildos@ut.ee
Ресей, Moscow, 119991

Y. Orlovskii

Institute of Physics, University of Tartu; Prokhorov General Physics Institute RAS

Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411; Moscow, 119991

I. Sildos

Institute of Physics, University of Tartu

Хат алмасуға жауапты Автор.
Email: ilmo.sildos@ut.ee
Эстония, Tartu, EE50411

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