Enviar artigo por via de e-mail Absorption spectra of some radiation-doped A3B5 compounds
- Autores: Rashidova S.S.1
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Afiliações:
- Institute of Physics of National Academy of Science of Azerbaijan
- Edição: Volume 121, Nº 5 (2016)
- Páginas: 710-712
- Seção: Condensed-Matter Spectroscopy
- URL: https://ogarev-online.ru/0030-400X/article/view/165113
- DOI: https://doi.org/10.1134/S0030400X16110175
- ID: 165113
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Resumo
Temperature dependences of the absorption coefficient in A3B5 crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 1017 electron/cm2 are studied. A low-lying Ev + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga1–xInxAs, InP, and InP〈Fe〉).
Sobre autores
Sh. Rashidova
Institute of Physics of National Academy of Science of Azerbaijan
Autor responsável pela correspondência
Email: sh.sh.rashidova@gmail.com
Azerbaijão, Baku, 1143
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