Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials


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By the example of ZnSe crystals, the capabilities of two-photon confocal microscopy as a tool for obtaining “planar” maps of nonequilibrium charge-carrier lifetimes in semiconductor materials and for investigating other direct-gap semiconductors and semiconductor heterostructures are considered. It is shown that such maps with a depth step and an in-plane resolution of several microns can be obtained for distances from the surface up to 1 mm. This technique is used to visualize inhomogeneities in the crystals under study and to examine their structure and luminescence characteristics.

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V. Kalinushkin

Prokhorov General Physics Institute

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Email: vkalin@kapella.gpi.ru
俄罗斯联邦, Moscow, 119991

O. Uvarov

Prokhorov General Physics Institute

Email: vkalin@kapella.gpi.ru
俄罗斯联邦, Moscow, 119991

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