Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials
- 作者: Kalinushkin V.P.1, Uvarov O.V.1
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隶属关系:
- Prokhorov General Physics Institute
- 期: 卷 104, 编号 11 (2016)
- 页面: 754-758
- 栏目: Optics and Laser Physics
- URL: https://ogarev-online.ru/0021-3640/article/view/159930
- DOI: https://doi.org/10.1134/S0021364016230089
- ID: 159930
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详细
By the example of ZnSe crystals, the capabilities of two-photon confocal microscopy as a tool for obtaining “planar” maps of nonequilibrium charge-carrier lifetimes in semiconductor materials and for investigating other direct-gap semiconductors and semiconductor heterostructures are considered. It is shown that such maps with a depth step and an in-plane resolution of several microns can be obtained for distances from the surface up to 1 mm. This technique is used to visualize inhomogeneities in the crystals under study and to examine their structure and luminescence characteristics.
作者简介
V. Kalinushkin
Prokhorov General Physics Institute
编辑信件的主要联系方式.
Email: vkalin@kapella.gpi.ru
俄罗斯联邦, Moscow, 119991
O. Uvarov
Prokhorov General Physics Institute
Email: vkalin@kapella.gpi.ru
俄罗斯联邦, Moscow, 119991
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