Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials


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By the example of ZnSe crystals, the capabilities of two-photon confocal microscopy as a tool for obtaining “planar” maps of nonequilibrium charge-carrier lifetimes in semiconductor materials and for investigating other direct-gap semiconductors and semiconductor heterostructures are considered. It is shown that such maps with a depth step and an in-plane resolution of several microns can be obtained for distances from the surface up to 1 mm. This technique is used to visualize inhomogeneities in the crystals under study and to examine their structure and luminescence characteristics.

Sobre autores

V. Kalinushkin

Prokhorov General Physics Institute

Autor responsável pela correspondência
Email: vkalin@kapella.gpi.ru
Rússia, Moscow, 119991

O. Uvarov

Prokhorov General Physics Institute

Email: vkalin@kapella.gpi.ru
Rússia, Moscow, 119991

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